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VB40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB40150C Description

www.DataSheet.co.kr New Product V40150C, VF40150C, VB40150C & VI40150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky R.

VB40150C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VB40150C Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 2 3 2 V40150C PIN 1 PIN 3 3 1 VF40150C PIN 1 PIN 3 PIN 2 2 3 1 PIN 2 CASE TO-263AB K K TO-262AA 2 1 1 VB40150C PIN 1 PIN 2 K HEATSINK PIN 1 P

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Datasheet Details

Part number
VB40150C
Manufacturer
Vishay ↗
File Size
153.21 KB
Datasheet
VB40150C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VB40150C-like datasheet