VB40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Re.

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Datasheet Specifications

Part number: VB40100G
Manufacturer: Vishay ↗ Siliconix
File Size: 189.52 KB
Datasheet: VB40100G_VishaySiliconix.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1
* Meets MSL level 1, per J-STD-020, LF maximum peak o

Applications

* TO-263AB K K TO-262AA 2 1 1 VB40100G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL

VB40100G Distributors

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VB40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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