VB30202C Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30202C, VF30202C, VB30202C, VI30202C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

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Datasheet Specifications

Part number: VB30202C
Manufacturer: Vishay ↗
File Size: 201.35 KB
Datasheet: VB30202C-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Gen 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B10

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VB30202C PIN 1 K PIN 2 HEATSINK 3 2 1 VI30202C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 200 V IFSM 260 A VF at IF =

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VB30202C Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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