VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectif.

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Datasheet Specifications

Part number: VB30100S
Manufacturer: Vishay ↗
File Size: 226.53 KB
Datasheet: VB30100S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance 2 V30100S PIN 1 PIN 2 CASE 3 1 VF30100S PIN 1 PIN 2 2 3 1
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (fo

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB30100S NC A K HEATSINK 2 3 VI30100S PIN 1 PIN 2

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VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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