VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB30100C-M3, VB30100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V .

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Datasheet Specifications

Part number: VB30100CHM3
Manufacturer: Vishay ↗
File Size: 85.96 KB
Datasheet: VB30100CHM3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* AEC-Q101 qualified available: - Automotive ordering code

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0

VB30100CHM3 Distributors

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VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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