VB20200G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

📥 Download Datasheet

VB20200G-E3 Datasheet Preview — Preview of VB20200G-E3 PDF

Datasheet Specifications

Part number: VB20200G-E3
Manufacturer: Vishay ↗
File Size: 209.15 KB
Datasheet: VB20200G-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compli

VB20200G-E3 Distributors

📁 Related Datasheet

VB2101K VB2120 VB2212N VB2290 VB2355 VB2405D-1W

📌 All Tags

VB20200G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB20200G-E3-like datasheet