VB20200C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20200C, VF20200C, VB20200C, VI20200C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

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Datasheet Specifications

Part number: VB20200C
Manufacturer: Vishay ↗
File Size: 150.73 KB
Datasheet: VB20200C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB20200C PIN 1 K PIN 2 HEATSINK VI20200C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Pa

VB20200C Distributors

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VB20200C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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