VB20200G Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky R.

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Datasheet Specifications

Part number: VB20200G
Manufacturer: Vishay ↗
File Size: 217.62 KB
Datasheet: VB20200G_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* 2 V20200G PIN 1 PIN 3 3 1 VF20200G PIN 1 PIN 3 PIN 2 2 3 1 PIN 2 CASE TO-263AB K K TO-262AA 2 1 1 VB20200G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECH

VB20200G Distributors

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VB20200G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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