VB20150SG High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Re.

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Datasheet Specifications

Part number: VB20150SG
Manufacturer: Vishay ↗
File Size: 225.39 KB
Datasheet: VB20150SG_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20150SG PIN 1 3 1 VF20150SG PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 260

Applications

* 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20150SG NC A K HEATSINK PIN 1 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA VI20150SG PIN 2 K PIN 3 Case: TO

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VB20150SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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