VB20150S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectif.

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Datasheet Specifications

Part number: VB20150S
Manufacturer: Vishay ↗
File Size: 225.50 KB
Datasheet: VB20150S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20150S PIN 1 3 1 VF20150S PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 260 °C

Applications

* 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20150S NC A K HEATSINK PIN 1 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, TO-262AA ITO-220AB,

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VB20150S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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