VB20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20150C, VF20150C, VB20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

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Datasheet Specifications

Part number: VB20150C
Manufacturer: Vishay ↗
File Size: 154.25 KB
Datasheet: VB20150C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB20150C PIN 1 K PIN 2 HEATSINK 3 2 1 VI20150C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 150 V IFSM 120 A

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VB20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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