VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB20120SG-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS .

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Datasheet Specifications

Part number: VB20120SG-M3
Manufacturer: Vishay ↗
File Size: 94.92 KB
Datasheet: VB20120SG-M3-Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 120 V 150 A 0.78 V 150 °C D2PAK (TO-263AB) Circuit

VB20120SG-M3 Distributors

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VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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