VB20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifie.

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Datasheet Specifications

Part number: VB20120SG-E3
Manufacturer: Vishay ↗
File Size: 213.68 KB
Datasheet: VB20120SG-E3-Vishay.pdf
Description: High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compl

VB20120SG-E3 Distributors

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VB20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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