VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Re.

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Datasheet Specifications

Part number: VB20120SG
Manufacturer: Vishay ↗
File Size: 218.06 KB
Datasheet: VB20120SG_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1
* S

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20120SG NC A K HEATSINK 2 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Moldi

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VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB20120SG-like datasheet