VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB20120C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A T.

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Datasheet Specifications

Part number: VB20120C-M3
Manufacturer: Vishay ↗
File Size: 97.04 KB
Datasheet: VB20120C-M3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 120 V 120 A 0.64 V 150 °C D2PAK (TO-263AB) Circ

VB20120C-M3 Distributors

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VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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