Datasheet Details
- Part number
- V40PW45C
- Manufacturer
- Vishay ↗
- File Size
- 128.47 KB
- Datasheet
- V40PW45C-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
V40PW45C Description
www.vishay.com V40PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.
V40PW45C Features
* Very low profile - typical height of 1.3 mm
Available
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
V40PW45C Applications
* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
40 A 45 V 240 A
VF at IF = 20 A (TA = 125 °C)
0.49 V
TJ max. Package
150 °C SlimDPAK (TO-252AE)
Circuit configuration
Common cathode
M
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