V40PW15C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V40PW15C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

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Datasheet Specifications

Part number: V40PW15C
Manufacturer: Vishay ↗
File Size: 113.50 KB
Datasheet: V40PW15C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 40 A VRRM IFSM 150 V 240 A VF at IF = 20 A (TA = 125 °C) 0.76 V TJ max. Package 150 °C SlimDPAK (TO-252AE) Circuit configuration Common cathode

V40PW15C Distributors

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V40PW15C Trench MOS Barrier Schottky Rectifier Vishay

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