Part number:
V40120C
Manufacturer:
File Size:
217.04 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
V40120C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
Datasheet Details
V40120C
217.04 KB
Dual high-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40120C Distributor