V40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Datasheet Details

Part number	V40100G
Manufacturer	Vishay Siliconix
File Size	189.52 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40100G_VishaySiliconix.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

📁 V40100G Similar Datasheet

V40100G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100K - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100PGW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40170C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by Vishay Siliconix

Published: May 3, 2010 |