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V30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number: V30M120C
Manufacturer: Vishay ↗
File Size: 139.65 KB
Datasheet: V30M120C-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30M120C Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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