V30M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A T.

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Datasheet Specifications

Part number: V30M100M-E3
Manufacturer: Vishay ↗
File Size: 95.38 KB
Datasheet: V30M100M-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V30M100M PI

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated lea

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V30M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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