V20120SG High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A.

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Datasheet Specifications

Part number: V20120SG
Manufacturer: Vishay ↗
File Size: 134.93 KB
Datasheet: V20120SG_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM VF at IF = 20 A 150 A 0.78 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single MEC

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V20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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