V20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ul.

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Datasheet Specifications

Part number: V20120S-E3
Manufacturer: Vishay ↗
File Size: 215.02 KB
Datasheet: V20120S-E3-Vishay.pdf
Description: High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VB20120S NC K A HEATSINK VI20120S 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A

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V20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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