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V20120S High-Voltage Trench MOS Barrier Schottky Rectifier

V20120S Description

www.vishay.com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A .

V20120S Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

V20120S Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 120 V 200 A VF at IF = 20 A 0.73 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Single MECHANI

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Datasheet Details

Part number
V20120S
Manufacturer
Vishay ↗
File Size
138.43 KB
Datasheet
V20120S_Vishay.pdf
Description
High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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