V20120S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A .

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Datasheet Specifications

Part number: V20120S
Manufacturer: Vishay ↗
File Size: 138.43 KB
Datasheet: V20120S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 120 V 200 A VF at IF = 20 A 0.73 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Single MECHANI

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V20120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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