V12P10 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V12P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

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Datasheet Specifications

Part number: V12P10
Manufacturer: Vishay ↗
File Size: 99.59 KB
Datasheet: V12P10-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automatic placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 12 A 100 V 200 A EAS 100 mJ VF at IF = 12 A TJ max. Package Circuit configuration 0.58 V 150 °C SMPC (TO-277A) Single MECHANICAL DATA

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V12P10 Trench MOS Barrier Schottky Rectifier Vishay

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