V12PM10 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V12PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .

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Datasheet Specifications

Part number: V12PM10
Manufacturer: Vishay ↗
File Size: 105.41 KB
Datasheet: V12PM10-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 100 V IFSM 200 A VF at IF = 15 A (125 °C) 0.61 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL

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V12PM10 Trench MOS Barrier Schottky Rectifier Vishay

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