V10DM150C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10DM150C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = .

📥 Download Datasheet

V10DM150C Datasheet Preview — Preview of V10DM150C PDF

Datasheet Specifications

Part number: V10DM150C
Manufacturer: Vishay ↗
File Size: 105.16 KB
Datasheet: V10DM150C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 150 V IFSM 80 A VF at IF = 5 A (TA = 125 °C) TJ max. 0.68 V

V10DM150C Distributors

📁 Related Datasheet

V10-A500X V10-H08X V10-H14X V10-H22X V10-H30X V1000LA160B

📌 All Tags

V10DM150C Trench MOS Barrier Schottky Rectifier Vishay

Vishay V10DM150C-like datasheet