V10DM100C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10DM100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.5 V at IF = 2.

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Datasheet Specifications

Part number: V10DM100C
Manufacturer: Vishay ↗
File Size: 105.11 KB
Datasheet: V10DM100C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 100 V IFSM 80 A VF at IF = 5 A (TA = 125 °C) TJ max. 0.62 V

V10DM100C Distributors

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V10DM100C Trench MOS Barrier Schottky Rectifier Vishay

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