IRLZ34 Power MOSFET

Vishay

Description

Power MOSFET IRLZ34, SiHLZ34 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 5.0 V 35 Qgs (nC) 7.1 Qgd (nC) 25 C.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRLZ34
Manufacturer: Vishay ↗
File Size: 1.18 MB
Datasheet: IRLZ34-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Availab

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

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IRLZ34 Power MOSFET Vishay

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