IRLZ24 Power MOSFET

Vishay

Description

Power MOSFET IRLZ24, SiHLZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18.
Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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IRLZ24 Datasheet Preview — Preview of IRLZ24 PDF

Datasheet Specifications

Part number: IRLZ24
Manufacturer: Vishay ↗
File Size: 1.30 MB
Datasheet: IRLZ24-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Availab

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

IRLZ24 Distributors

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IRLZ24 Power MOSFET Vishay

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