IRLZ34N N-channel Power MOSFET

International Rectifier

Description

www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number: IRLZ34N
Manufacturer: International Rectifier
File Size: 136.44 KB
Datasheet: IRLZ34N_InternationalRectifier.pdf
Description: N-channel Power MOSFET

Features

* Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www. DataSheet4U. com IRLZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB ww w. D ata Sh eet 4U . co

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IRLZ34N N-channel Power MOSFET International Rectifier

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