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IRFZ10 Power MOSFET

IRFZ10 Description

www.vishay.com IRFZ10 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) VGS = 10 V .
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

IRFZ10 Features

* Dynamic dV/dt rating
* 175 °C operating temperature
* Fast switching Available
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note
* This datas

IRFZ10 Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRFZ10PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted

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