IRFZ24A - ADVANCED POWER MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFZ24A
Manufacturer	Fairchild Semiconductor
File Size	247.25 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRFZ24A_FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.050µ (Typ. ) IRFZ24A BVDSS = 60 V RDS(on) = 0.07Ω ID = 17 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characterist.

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Published: Jan 27, 2007 |