TSHG8200 High Speed Infrared Emitting Diode

Vishay Siliconix

Description

www.DataSheet.co.kr TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero .
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Datasheet Specifications

Part number: TSHG8200
Manufacturer: Vishay ↗ Siliconix
File Size: 110.31 KB
Datasheet: TSHG8200_VishaySiliconix.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half inte

Applications

* Infrared radiation source for operation with CMOS cameras (illumination)
* High speed IR data transmission
* Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG8200 Ie (mW/sr) 180 ϕ (deg) ± 10 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characte

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TSHG8200 High Speed Infrared Emitting Diode Vishay Siliconix

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