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TSHG6210 High Speed Infrared Emitting Diode

TSHG6210 Description

www.DataSheet.co.kr TSHG6210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero .
TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

TSHG6210 Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half inte

TSHG6210 Applications

* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission
* Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG6210 Ie (mW/sr) 230 ϕ (deg) ± 10 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDER

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High Speed Infrared Emitting Diode Vishay Siliconix
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