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TSHG6410 High Speed Infrared Emitting Diode

TSHG6410 Description

Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 www.vishay.com TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface.
TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, unt.

TSHG6410 Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Peak wavelength: λp = 850 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 15°
* Low forward voltage

TSHG6410 Applications

* Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
* Transmission systems according to IrDA requirements and for carrier frequency based systems (e. g. ASK/FSK coded, 450 kHz or 1.3 M

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High Speed Infrared Emitting Diode Vishay Siliconix
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