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TSHG5210 High Speed Infrared Emitting Diode

TSHG5210 Description

www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 .
TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

TSHG5210 Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength:
* p = 850 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity:  = ±

TSHG5210 Applications

* in
* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission
* Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG5210 Ie (mW/sr) 230 Note
* Test conditions see table “Basic Characteristics”  (deg) ± 10
* p (nm)

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High Speed Infrared Emitting Diode Vishay Siliconix
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