Datasheet4U Logo Datasheet4U.com

TSHF5410 High Speed Infrared Emitting Diode

TSHF5410 Description

Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here) www.vishay.com TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode,.
TSHF5410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, unt.

TSHF5410 Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength: λp = 890 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ± 27°

TSHF5410 Applications

* Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
* Transmission systems according to IrDA requirements and for carrier frequency based systems (e. g. ASK/FSK coded, 450 kHz or 1.3 M

📥 Download Datasheet

Preview of TSHF5410 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TSHF5400 - High Speed IR Emitting Diode in 5 mm (T-13/4) Package (Vishay Telefunken)
  • TSHF5200 - High Speed IR Emitting Diode in 5 mm (T-13/4) Package (Vishay Telefunken)
  • TSHF4410 - High Speed Infrared Emitting Diode (Vishay)
  • TSHF6210 - High Speed Infrared Emitting Diode (Vishay)
  • TSHF6410 - High Speed Infrared Emitting Diode (Vishay)
  • TSH10 - 140MHz BANDWIDTH LOW NOISE SINGLE OPERATIONAL AMPLIFIER (STMicroelectronics)
  • TSH11 - 120MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER (STMicroelectronics)
  • TSH110 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)

📌 All Tags

High Speed Infrared Emitting Diode Vishay Siliconix
Vishay Siliconix TSHF5410-like datasheet