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SiHF840 Power MOSFET

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Description

www.vishay.com IRF840, SiHF840 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuration 500.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching Available
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840 ABSOLUTE MAXIMUM RATINGS (TC

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