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SUP57N20-33 N-Channel MOSFET

SUP57N20-33 Description

SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 200 0.033 at VGS = 10 V ID (A) 57 TO-2.

SUP57N20-33 Features

* TrenchFET® Power MOSFET

SUP57N20-33 Applications

* Isolated DC/DC converters - Primary-Side Switch D Available RoHS
* COMPLIANT DRAIN connected to TAB GD S Top View Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Dr

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N-Channel MOSFET Vishay Siliconix
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