VS4805DS Dual P-Channel Advanced Power MOSFET

Vanguard Semiconductor

Description

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Description VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance.

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Datasheet Specifications

Part number: VS4805DS
Manufacturer: Vanguard Semiconductor
File Size: 299.90 KB
Datasheet: VS4805DS-VanguardSemiconductor.pdf
Description: Dual P-Channel Advanced Power MOSFET

Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC =25°C

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VS4805DS Dual P-Channel Advanced Power MOSFET Vanguard Semiconductor

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