VG26V17405FJ - CMOS DRAM

Product Overview

Vanguard International Semiconductor

Datasheet Details

Part number	VG26V17405FJ
Manufacturer	Vanguard InterNational Semiconductor
File Size	549.54 KB
Description	CMOS DRAM
Datasheet	VG26V17405FJ Datasheet
Note	This datasheet PDF includes multiple part numbers: VG26V17405FJ, VG2617405FJ. Please refer to the document for exact specifications by model.
Additional preview pages of the VG26V17405FJ datasheet.

Product details

Description

VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.A new refresh feature called “self-refresh” is supported and very slow CBR cycles are being performed.lt

Features

Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply.
High speed tRAC acess time: 50/60ns.
Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas).
Extended - data - out(EDO) page mode access.
I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) DataSheet4U. com.
2048 refresh cycle in 32 ms(Std. ) or 128 ms(S-version).

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Other Datasheets by Vanguard International Semiconductor

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Published: Sep 12, 2006 |