VG26V17400E - CMOS Dynamic RAM

Product Overview

Vanguard International Semiconductor

Datasheet Details

Part number	VG26V17400E
Manufacturer	Vanguard InterNational Semiconductor
File Size	209.13 KB
Description	CMOS Dynamic RAM
Datasheet	VG26V17400E Datasheet
Note	This datasheet PDF includes multiple part numbers: VG26V17400E, VG26V17400EJ-5. Please refer to the document for exact specifications by model.
Additional preview pages of the VG26V17400E datasheet.

Product details

Description

VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed.It is packaged in JEDEC standard 2

Features

Single 5V (±10 %) or 3.3V (±10 %) only power supply.
High speed tRAC access time : 50/60 ns.
Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
Fast Page Mode access.
I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
2048 refresh cycles in 32 ms (Std) or 128ms (S - version.

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Other Datasheets by Vanguard International Semiconductor

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VG26V17400FJ - CMOS DRAM
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VG26VS17400E - 4/194/304 x 4 - Bit CMOS Dynamic RAM
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Published: Dec 20, 2017 |