VBZR2N7000 N-Channel MOSFET

VBsemi

Description

VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S.

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Datasheet Specifications

Part number: VBZR2N7000
Manufacturer: VBsemi
File Size: 266.31 KB
Datasheet: VBZR2N7000-VBsemi.pdf
Description: N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Low On-Resistance: 2 Ω
* Low Threshold: 2 V (typ. )
* Low Input Capacitance: 25 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* 1200V ESD

Applications

* Direct Logic-Level Interface: TTL/CMOS
* Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
* Battery Operated Systems
* Solid-State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Vo

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