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VBG5325 N- and P-Channel MOSFET

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Description

VBG5325 N- and P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) (Ω) 0.018 at VGS = 10 V 30 0.02.

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Datasheet Specifications

Part number
VBG5325
Manufacturer
VBsemi
File Size
378.09 KB
Datasheet
VBG5325-VBsemi.pdf
Description
N- and P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Motor Drive
* Mobile Power Bank D1 S2 PDIP-8 G2 S2 G1 S1 G1 S1 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (

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