VBGC1101M N-Channel MOSFET

VBsemi

Description

VBGC1101M N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4..

📥 Download Datasheet

VBGC1101M Datasheet Preview — Preview of VBGC1101M PDF

Datasheet Specifications

Part number: VBGC1101M
Manufacturer: VBsemi
File Size: 237.90 KB
Datasheet: VBGC1101M-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* High Frequency Boost Converter
* LED Backlight for LCD TV D HVMDIP S G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C

VBGC1101M Distributors

📁 Related Datasheet

📌 All Tags

VBGC1101M N-Channel MOSFET VBsemi

VBsemi VBGC1101M-like datasheet