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VBGC2610N Power MOSFET

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Description

VBGC2610N Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 0.10 5.4 11 Single.

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Datasheet Specifications

Part number
VBGC2610N
Manufacturer
VBsemi
File Size
364.77 KB
Datasheet
VBGC2610N-VBsemi.pdf
Description
Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* P-channel
* 175 °C operating temperature
* Fast switching www. VBsemi. com HVMDIP S G D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °

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