VBG3638 Dual N-Channel MOSFET

VBsemi

Description

VBG3638 Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration .

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Datasheet Specifications

Part number: VBG3638
Manufacturer: VBsemi
File Size: 643.91 KB
Datasheet: VBG3638-VBsemi.pdf
Description: Dual N-Channel MOSFET

Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested www. VBsemi. com D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage

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VBG3638 Dual N-Channel MOSFET VBsemi

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