FDS89141 Dual N-Channel 100V MOSFET

VBsemi

Description

FDS89141-VB FDS89141-VB Datasheet Dual N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0360 at VGS = 10 V 0.

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Datasheet Specifications

Part number: FDS89141
Manufacturer: VBsemi
File Size: 333.41 KB
Datasheet: FDS89141-VBsemi.pdf
Description: Dual N-Channel 100V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Extremely Low Qgd for Switching Losses
* 100 % Rg Tested
* 100 % Avalanche Tested

Applications

* Primary Side Switch D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 6.4 Continuous Drain Current (TJ = 150

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FDS89141 Dual N-Channel 100V MOSFET VBsemi

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