FDS8936S - Dual N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDS8936S
Manufacturer	Fairchild Semiconductor
File Size	269.55 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS8936S_FairchildSemiconductor.pdf

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS8936S 30 ±20.

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Published: Mar 30, 2005 |